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Microwave (Imp Questions)


                                                                                                          COLLEGE  ROLL NO:………………..
 SESSION- 2011-2012

Microwave Engineering (EEC 603)


1)       A signal of power 28 MW is fed into one of the collinear ports of lossless H-plane Tee. Find the power in the remaining ports when other ports are terminated by means of matched loads.
2)     In an H-plane Tee junction, 20 MW power is applied to port 3 which is perfectly matched. Find the power delivered to the load 60 Ω and 75 Ω converted to Port 1 & 2.
3)     Explain waveguide Tee in detail & find out S- Matrix of each Tee.
4)     Explain Microwave propagation in ferrites.
5)     Explain Microwave circulators. 
6)     Explain Microwave isolators.



1)      Explain construction & operation of TWT.
2)     Explain mode of operation of microwave BJT.
3)     Explain hybrid π-model of BJT.
4)     Explain VI charters tics of JFET & also define boundary condition .
5)     Explain small signal equivalent circuit of GaAs MESFET.
6)     A reflex Klystron operates under the following condition :  V0= 500v ,  Rsh= 20 KΩ, n=2 ,  fr=8    GHz ,  L= 1 mm is the spacing b/w repeller and cavity .  
i) Value of repeller voltage
     ii) Direct current necessary to give microwave gap voltage of 200V.
    iii) Electronic efficiency .


1)       A typical n-channel GaAs MESFET has the following parameters Electron concentration  N = 8 x 10  cm , channel height  a=0.1 µm , relative dielectric constant εr      , Channel length  L= 14 µm , Channel width  Z=36 µm, Electron mobility  µ =     .o8 m2/V.s , Drain voltage  V d = 5 volts , Gate voltage  Vg= -2 volts , Saturation drift velocity  Vs = 2x 105   m/s       
     a)    Calculate the pinch off voltage .                               
     b)   Compute the velocity ratio     
     c)    Determine the saturation current at Vg = 0 ,               
     d) Find the Drain Current .

2)      A Two Cavity  Klystron operates under the following condition :  V0= 900v ,  I0= 30 mA,    d= 1 mm cavity , Rsh= 49 GΩ, n=2 ,  f=8 GHz ,  L = 4 mm . Find           
      i)   The electron velocity             
      ii) The input voltage for maximum output voltage ,                                                    
     iii) The dc transit time of electron
      iv) voltage gain in db.    

3)      Explain the Tunnel Diode.

4)     Explain the Backward Wave Oscillator.                                                                                                       

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